A quench-cooling procedure compared with the gate-protocol for aging experiments in the Electron-Glass

TL;DR

This paper compares a quench-cooling aging protocol with the established gate-protocol in electron-glass experiments, highlighting their advantages, limitations, and consistency in observing full aging effects.

Contribution

It introduces and evaluates a quench-cooling protocol for aging experiments in electron-glass systems, comparing it with the existing gate-protocol.

Findings

Both protocols demonstrate full aging behavior.

The quench-cooling protocol offers better control but has some limitations.

Results are consistent across different systems.

Abstract

Anderson-insulating indium-oxide films excited far from equilibrium exhibit a variety of memory effects including aging. Full aging has been recently demonstrated in this system using two different experimental protocols. The first, (gate-protocol) employed a MOSFET structure and involved switching between two gate voltages. In a different procedure, the system was subjected to a non-ohmic longitudinal field F for a waiting-time tw, and the relaxation of G was monitored after the field was switched back to its linear response value. In this paper, we describe yet another protocol that involves measuring the response of the system that has been 'aged' at some low temperature TL for a duration tw after it was quench-cooled from high temperature TH. Like in the previous protocols, this procedure results in full-aging behavior. The advantages and shortcomings of the quench-cooling protocol are pointed out. The results of aging experiments based on the better controlled, gate-protocol performed with different systems are compared and discussed