Local density of states subject to finite impurity concentration in graphene
Yuriy V. Skrypnyk, Vadim M. Loktev

TL;DR
This paper investigates how the local density of states in graphene changes with impurity concentration, identifying a critical point where spectral features transform significantly, affecting both the electron spectrum and impurity subsystem.
Contribution
It introduces the concept of a critical impurity concentration in graphene where local density of states behavior and spectral features undergo a fundamental change.
Findings
Identification of a characteristic impurity concentration in graphene
Disappearance of impurity-induced features at high concentrations
Spectral transformation of the impurity subsystem
Abstract
It is demonstrated that there is a characteristic impurity concentration, at which variation with concentration and overall appearance of the local density of states at the impurity site in graphene are changing their behavior. Features that are prominent in the local density of states for the single impurity are disappearing from it when impurity concentration far exceeds this critical value. The impurity subsystem not only induces the rearrangement of the electron spectrum in graphene, but also undergoes a substantial spectral transformation by itself, which can be observed experimentally.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsGraphene research and applications · Silicon Nanostructures and Photoluminescence
