On the possibility of level broadening in a quantum dot due to electrostatic interaction with a gate electrode
K. M. Indlekofer

TL;DR
This paper investigates how Coulomb interactions with a nearby metallic gate can cause energy level broadening in a quantum dot, highlighting the impact of electrostatic coupling on quantum dot properties.
Contribution
It introduces a model analyzing Coulomb-induced level broadening in quantum dots due to electrostatic interaction with a 2D electron gas gate.
Findings
Coulomb scattering can lead to measurable level broadening in quantum dots.
Electrostatic interaction with a metallic gate influences quantum dot energy levels.
Theoretical framework for Coulomb-induced broadening effects is developed.
Abstract
In this article, we consider a quantum dot system which is interacting with a spatially separated metallic gate electrode via direct Coulomb interaction. Here, the gate electrode is described by an idealized two-dimensional electron gas. Due to Coulomb scattering effects, the latter may introduce level broadening to the quantum dot system.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Silicon Nanostructures and Photoluminescence · Advanced Materials Characterization Techniques
