Low-Energy Electronic Structure of the High-Tc Cuprates La2-xSrxCuO4 Studied by Angle-resolved Photoemission Spectroscopy

TL;DR

This study uses ARPES to systematically analyze the electronic structure of La2-xSrxCuO4 across various doping levels, revealing how doping influences Fermi surfaces, pseudogaps, and quasiparticles in high-Tc cuprates.

Contribution

It provides a comprehensive doping-dependent analysis of the electronic structure and interactions in La2-xSrxCuO4, highlighting the evolution of pseudogaps and Fermi arcs.

Findings

Doping causes systematic changes in band dispersions and Fermi surfaces.

Pseudogap opening and Fermi arc formation explain transport and thermodynamic anomalies.

Carrier number decreases with reduced hole doping due to pseudogap effects.

Abstract

We have performed a systematic angle-resolved photoemission spectroscopy (ARPES) study of the high-Tc cuprates La2-xSrxCuO4, ranging from the underdoped insulator to the superconductor to the overdoped metal. We have revealed a systematic doping evolution of the band dispersions and (underlying) Fermi surfaces, pseudogap and quasi-particle features under the influence of strong electron-electron interaction and electron-phonon interaction. The unusual transport and thermodynamic properties are explained by taking into account the pseudogap opening and the Fermi arc formation, due to which the carrier number decreases as the doped hole concentration decreases.