Pure spin current in graphene NS structures
D. Greenbaum, S. Das, G. Schwiete, P. G. Silvestrov

TL;DR
This paper proposes theoretical device structures using graphene NS junctions to generate pure spin currents by filtering charge from spin-polarized currents, leveraging specular Andreev reflection.
Contribution
It introduces novel device configurations in graphene to produce pure spin currents based on specular Andreev reflection, a recently predicted phenomenon.
Findings
Theoretical demonstration of pure spin current generation in graphene NS structures.
Proposal of two device structures utilizing normal-superconductor junctions.
Potential applications in spintronics with efficient spin current control.
Abstract
We demonstrate theoretically the possibility to produce a pure spin current in graphene by filtering the charge from a spin-polarized electric current. To achieve this effect, which is based on the recently predicted property of specular Andreev reflection in graphene, we propose two possible device structures containing normal-superconductor (NS) junctions.
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