Interlayer exchange coupling in (Ga,Mn)As based multilayers

TL;DR

This paper investigates the potential for antiferromagnetic interlayer coupling in (Ga,Mn)As multilayers using mean-field theory, aiming to enable magnetoresistance effects similar to giant magnetoresistance in metallic systems.

Contribution

It introduces a theoretical approach to design (Ga,Mn)As multilayers with antiferromagnetic coupling, advancing the understanding of magnetic interactions in dilute magnetic semiconductors.

Findings

Potential multilayer structures with antiferromagnetic coupling identified

Mean-field theory predicts carrier-induced ferromagnetism in these structures

Framework for designing spintronic devices based on (Ga,Mn)As multilayers

Abstract

Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.