AMR and magnetometry studies of ultra thin GaMnAs films
A. W. Rushforth, A. D. Giddings, K. W. Edmonds, R. P. Campion, C. T., Foxon, B. L. Gallagher
TL;DR
This study investigates the anisotropic magnetoresistance (AMR) in ultra-thin GaMnAs films, revealing sign variability and out-of-plane magnetization components, contributing to understanding magnetic properties in thin ferromagnetic semiconductors.
Contribution
It provides new insights into the AMR behavior and magnetization orientation in 5nm GaMnAs films, highlighting the dependence on current direction and temperature.
Findings
AMR sign varies with current direction
Out-of-plane magnetization component observed at low temperatures
Transport and magnetometry measurements are consistent
Abstract
We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film.
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