Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures

TL;DR

This paper reports a new magneto-resistive effect in ferromagnetic (Ga,Mn)As nanostructures, where resistance depends on magnetic history, enabling potential memory device applications.

Contribution

It introduces a novel magneto-resistive phenomenon in lithographically defined (Ga,Mn)As nanostructures related to magnetic domain wall rearrangement.

Findings

Resistance depends on previous magnetic field direction.

Effect observed in lithographically shaped three-arm nanostructures.

Potential for designing devices with unique switching and memory properties.

Abstract

We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, reveals as a dependence of zero-field resistance on the direction of previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.