Millisecond spin-flip times of donor-bound electrons in GaAs

TL;DR

This paper reports the observation of millisecond spin-flip relaxation times in donor-bound electrons in high-purity n-GaAs, significantly longer than previously known, with a strong magnetic field dependence aligning with existing theories.

Contribution

It provides the first measurement of millisecond spin-flip times in donor-bound electrons in high-purity n-GaAs, extending understanding of spin dynamics in this material.

Findings

Spin-flip times reach milliseconds in high-purity n-GaAs.

Times increase with magnetic field following a power-law.

Results agree qualitatively with existing quantum dot theories.

Abstract

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.