Nanofabrication of spin-transfer torque devices by a PMMA mask one step process: GMR versus single layer devices

TL;DR

This paper introduces a one-step nanofabrication process for spin-transfer torque devices using a PMMA mask, demonstrating device quality and analyzing switching behaviors in single and double layer magnetic structures.

Contribution

It presents a novel one-step lithography method for fabricating low-resistance spin torque devices, with insights into their switching dynamics and resistance behaviors.

Findings

High-quality double layer devices with low resistance achieved

Hysteretic switching observed in single layer devices

Complex dynamical excitations identified at higher fields

Abstract

We present a method to prepare magnetic spin torque devices of low specific resistance in a one step lithography process. The quality of the pillar devices is demonstrated for a standard magnetic double layer device. For single layer devices, we found hysteretic switching and a more complex dynamical excitation pattern in higher fields. A simple model to explain the resistance spikes is presented.