Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

TL;DR

This paper investigates how inhomogeneous spin-density affects spin-polarized transport in multilayered ferromagnetic semiconductor nanostructures, revealing material-dependent variations and resistivity changes near transition temperatures.

Contribution

It provides a comparative analysis of spin-dependent transport properties in different ferromagnetic multilayered semiconductors as a function of temperature.

Findings

Resistivity increases near the transition temperature.

Transport properties vary significantly among materials.

Spin-dependent mobility and conductivity are strongly temperature-dependent.

Abstract

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.