Resistive hystersis effects in perovskite oxide-based heterostructure junctions
M.P. Singh, L. Mechin, W. Prellier, M. Maglione
TL;DR
This study investigates resistive hysteresis effects in oxide-based heterostructure junctions composed of La0.7Ca0.3MnO3 and BaTiO3, revealing temperature-dependent switching behaviors and resistance modulation.
Contribution
It presents a detailed analysis of electrical and structural properties of LCMO/BTO/LCMO heterostructures, highlighting unique resistive switching phenomena at different temperatures.
Findings
Reproducible switching behaviors at 77 K
Linear I-V characteristics at 300 K
Distinct resistance modulation compared to ultrathin ferroelectric layers
Abstract
In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The DC current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300 K, the devices showed the linear (I-V) characteristics, whereas at 77 K, (I-V) curves exhibited some reproducible switching behaviours with well-defined remnant currents. The resulting resistance modulation is very different from what was already reported in ultrathin ferroelectric layers displaying resistive switching. A model is presented to explain the datas
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