Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots

TL;DR

This study investigates electron transport in Si/SiGe antidot superlattices, revealing new magnetoresistance resonances in lattices with large antidots, expanding understanding of quantum transport phenomena in semiconductor nanostructures.

Contribution

The paper reports the discovery of new magnetoresistance oscillations in Si/SiGe antidot lattices with large antidots, which were not previously observed in similar systems.

Findings

Conventional magnetoresistance peaks observed in certain lattice periods.

New magnetoresistance oscillations found beyond the last commensurability peak.

Oscillations likely originate from periodic skipping orbits around antidots.

Abstract

In the present work we have investigated the transport properties in a number of Si/SiGe samples with square antidot lattices of different periods. In samples with lattice periods equal to 700 nm and 850 nm we have observed the conventional low-field commensurability magnetoresistance peaks consistent with the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot lattices. In samples with a 600 nm lattice period a new series of well-developed magnetoresistance oscillations has been found beyond the last commensurability peak which are supposed to originate from periodic skipping orbits encircling an antidot with a particular number of bounds.