Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs
Miron J. Cristea
TL;DR
This paper derives an analytical formula to determine the reach-through breakdown voltage for various semiconductor devices like bipolar transistors, asymmetric thyristors, and Punch Through-IGBTs, aiding in device design and analysis.
Contribution
It introduces the first analytical formula for calculating the reach-through breakdown voltage of several semiconductor devices with similar structures.
Findings
Provides a new analytical tool for device engineers
Enables precise calculation of breakdown voltages
Facilitates improved device design and reliability
Abstract
In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar structure is deduced for the first time.
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Taxonomy
TopicsAdvanced Materials and Semiconductor Technologies · Silicon Carbide Semiconductor Technologies · Electrostatic Discharge in Electronics