Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots

TL;DR

This study uses 3D k.p calculations to explore how substrate orientation affects the electronic and optical properties of InAs/GaAs quantum dots, revealing that dot size in the growth direction influences this effect.

Contribution

It introduces a detailed analysis of substrate orientation effects on quantum dot properties considering size and strain effects using advanced modeling.

Findings

Quantum dot transition energies vary with substrate orientation.

Flatter quantum dots show greater differences from the [001] reference.

Substrate orientation impact depends on quantum dot size in the growth direction.

Abstract

Using 3D k.p calculation including strain and piezoelectricity we predict variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index substrates [11k], where k = 1,2,3 and are compared with [001]. We find that the QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case.