Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As

TL;DR

This paper proposes Li(Zn,Mn)As as a new n-type ferromagnetic semiconductor with high Curie temperature, featuring independent control of carrier concentration and Mn doping, supported by ab initio calculations and growth analysis.

Contribution

It introduces Li(Zn,Mn)As as a promising n-type ferromagnetic semiconductor with unique solubility and doping control advantages, backed by detailed theoretical and growth feasibility analysis.

Findings

Li(Zn,Mn)As can achieve high Curie temperatures.

Independent control of carrier concentration and Mn doping is possible.

Theoretical predictions are supported by ab initio calculations.

Abstract

We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include unlimited solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by detail ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the microscopic physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.