Dirac and Normal Fermions in Graphite and Graphene: Implications to the Quantum Hall Effect
Igor A. Luk'yanchuk, Yakov Kopelevich

TL;DR
This paper analyzes the quantum Hall effect in graphite and graphene, revealing the coexistence of normal and Dirac-like carriers, which explains recent observations of integer and semi-integer quantum Hall effects in these materials.
Contribution
It demonstrates that both normal and Dirac-like carriers coexist in graphite, providing insight into the quantum Hall phenomena observed in these materials.
Findings
Identification of normal and Dirac-like carriers in graphite
Observation of simultaneous integer and semi-integer QHE in HOPG
Spectral analysis linking carriers to Berry phases
Abstract
Spectral analysis of Shubnikov de Haas (SdH) oscillations of magnetoresistance and of Quantum Hall Effect (QHE) measured in quasi-2D highly oriented pyrolytic graphite (HOPG) [Phys. Rev. Lett. 90, 156402 (2003)] reveals two types of carriers: normal (massive) electrons with Berry phase 0 and Dirac-like (massless) holes with Berry phase pi. We demonstrate that recently reported integer- and semi-integer QHE for bi-layer and single-layer graphenes take place simultaneously in HOPG samples.
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Advanced Physical and Chemical Molecular Interactions
