Bias-induced insulator-metal transition in organic electronics

TL;DR

This paper explores how bias voltage can induce an insulator-metal transition in organic electronic devices, explaining the phenomenon through a theoretical model that accounts for conductance switching and large on-off ratios.

Contribution

It introduces a theoretical framework combining the Su-Schrieffer-Heeger model with non-equilibrium Green's functions to explain bias-induced phase transitions in organic electronics.

Findings

Energy level crossover causes the insulator-metal transition.

Peierls phase is eliminated near the threshold voltage.

The model accounts for bistable conductance switching.

Abstract

We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is explained with the energy levels crossover that eliminates the Peierls phase and delocalizes the electron states near the threshold voltage. This may account for the experimental observations on the devices that exhibit intrinsic bistable conductance switching with large on-off ratio.