Manipulating exciton fine-structure in quantum dots with a lateral electric field

TL;DR

This paper demonstrates how a lateral electric field can actively manipulate the exciton fine-structure splitting in single InGaAs quantum dots, enabling tuning over large values and through zero, with observable effects on Stark shifts and photoluminescence.

Contribution

It introduces a method to control exciton fine-structure splitting in quantum dots using lateral electric fields, providing a new way to tune quantum dot properties.

Findings

Stark shifts up to 1.5 meV observed

Fine-structure splitting can be tuned through zero

Electric field affects linewidth and photoluminescence intensity

Abstract

The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active manipulation of the single particle wave-functions. Remarkably, the splitting can be tuned over large values and through zero.