Self - Organized Si Dots On Ge Substrates

TL;DR

This paper investigates the epitaxial growth of silicon on germanium substrates, focusing on growth conditions, alloying effects, and methods to enhance silicon island formation and ordering.

Contribution

It introduces the use of carbon pre-deposition and pre-structured Ge substrates to improve silicon island nucleation and ordering on Ge surfaces.

Findings

Island formation occurs across studied temperature range.

High temperatures lead to strong alloying with the substrate.

Carbon pre-deposition reduces alloying and aids nucleation.

Abstract

The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.