On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)

TL;DR

This paper reviews the Hg-Photo-CVD process, highlighting its potential to enable low-temperature growth of nano-crystalline silicon for flexible photovoltaic applications, advancing thin film solar cell technology.

Contribution

It provides an overview of Hg-Photo-CVD's capabilities for low-temperature nano-crystalline silicon deposition, emphasizing its potential in photovoltaic device fabrication.

Findings

Hg-Photo-CVD can produce nano-crystalline silicon at reduced temperatures.

The technique is suitable for flexible, low-cost solar cell substrates.

Potential for high-efficiency thin film photovoltaic devices.

Abstract

Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. Keywords: Photovoltaic, Solar Cell, Thin films, Nano-Crystalline Silicon, Hydrogenated Amorphous Silicon, Hydrogen Dilution, Low Temperature Growth, Photo-Chemical Vapor Deposition.