Spin-dependent transport in p+-CdBxF2-x - n-CdF2 planar structures
N. T. Bagraev, M. I. Bovt, O. N. Guimbitskaya, L. E. Klyachkin, A. M., Malyarenko, A. I. Ryskin, A. S. Shcheulin
TL;DR
This study investigates spin-polarized hole transport in p+-CdBxF2-x - n-CdF2 structures, demonstrating spin transistor effects through conductance oscillations caused by Rashba spin-orbit interaction variations.
Contribution
It provides experimental evidence of spin transistor behavior in a specific planar structure by analyzing conductance oscillations linked to Rashba SOI.
Findings
Observation of hole conductance oscillations due to Rashba SOI
Evidence of spin transistor effect with oscillation amplitude near e2/h
Control of spin transport via quantum well engineering
Abstract
The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the n-CdF2<Y> bulk crystal. The findings of the hole conductance oscillations in the plane of the p-type quantum well that are due to the variations of the Rashba SOI are shown to be evidence of the spin transistor effect, with the amplitude of the oscillations close to e2/h.
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