ODMR Of Impurity Centers Embedded In Silicon Microcavities
N.T. Bagraev, W. Gehlhoff, L.E. Klyachkin, A.M. Malyarenko, V.A., Mashkov, V.V. Romanov, T.N. Shelykh

TL;DR
This paper investigates the strong light-matter interactions in silicon microcavities with embedded impurity centers, revealing high-efficiency photoluminescence and exchange splitting effects through ODMR measurements.
Contribution
It demonstrates the observation of ODMR and exchange splitting in impurity centers within silicon microcavities, highlighting the role of excitonic normal-mode coupling.
Findings
High-efficiency bound exciton photoluminescence observed.
Exchange splitting caused by impurity centers without external magnetic field.
Angular dependence of transmission spectra evidences ODMR effects.
Abstract
We present the findings of high efficient light absorption in self-assembled quantum wells (SQW) embedded in silicon microcavities that exhibit a distributed feedback identified by the FIR transmission spectra. The excitonic normal-mode coupling (NMC) is found to result in high efficient bound exciton photoluminescence in the range of the Rabi splitting. The bound excitons at the iron-boron pair and the erbium-related centers inserted in SQW are shown to cause giant exchange splitting of the center multiplets as a result of the strong sp-d and sp-f mixing in the absence of the external magnetic field. The NMC regime is observed to reveal this exchange splitting in the angular dependencies of the transmission spectra measured in the range of the Rabi splitting that are evidence of the ODMR of the trigonal iron-boron pairs and trigonal erbium-related centers.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic Crystals and Applications
