Spin-dependent transport in the p-type ultra-narrow silicon quantum well

TL;DR

This paper investigates spin-dependent transport phenomena in ultra-narrow p-type silicon quantum wells, revealing interplay between Rashba spin-orbit effects, quantum subband formation, and Andreev reflection.

Contribution

It demonstrates the coexistence and interaction of spin-orbit induced oscillations with quantum confinement and Andreev reflection in silicon quantum wells.

Findings

Observation of Aharonov-Casher conductance oscillations

Identification of interplay between Rashba effect and quantum subbands

Evidence of Andreev reflection effects in silicon quantum wells

Abstract

We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.