Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions
Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, and, Hideo Ohno
TL;DR
This study explores how the choice of ferromagnetic electrode materials affects the tunnel magnetoresistance (TMR) ratio in MgO-barrier magnetic tunnel junctions, highlighting the importance of crystalline orientation for optimizing TMR performance.
Contribution
It demonstrates that the TMR ratio depends on electrode material and crystalline orientation, achieving a record 450% TMR with specific electrode and annealing conditions.
Findings
High TMR ratio (355%) achieved with Co40Fe40B20 electrodes at 400°C.
No high TMR observed with Co50Fe50 or Co90Fe10 electrodes.
Maximum TMR of 450% obtained at 450°C in a pseudo spin-valve MTJ.
Abstract
We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 degree C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (001) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta = 450 degree C in a pseudo spin-valve MTJ.
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