Probe to properties of MgB2 thick film on silicon carbide substrate

TL;DR

This paper reports the successful synthesis of MgB2 thick films on silicon carbide substrates with high transition temperature and critical current density, demonstrating potential for superconducting applications.

Contribution

It introduces a novel hybrid physical-chemical deposition method to produce high-quality MgB2 thick films on SiC substrates with detailed characterization.

Findings

Transition temperature above 40 K

Critical current density of 6 MA/cm2 at 10 K

c-axis oriented MgB2 structure with MgO impurities

Abstract

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature TC above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density JC, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA/cm2 in self field at 10 K.