Temperature dependent Electron Land\'e g-Factor and Interband Matrix Element in GaAs

TL;DR

This paper presents high-precision measurements of the electron Landé g-factor in GaAs across a wide temperature range, revealing a temperature-dependent interband matrix element that improves theoretical models.

Contribution

It introduces a temperature-dependent interband matrix element in the five-level kp-theory, aligning experimental data with theoretical predictions.

Findings

The g-factor decreases with temperature.

The interband matrix element also decreases with temperature.

Improved theoretical modeling of electron properties in GaAs.

Abstract

Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature dependent effective mass a temperature dependence of the interband matrix element within a common five level kp-theory can model both parameters consistently. A strong decrease of the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.