A simple method for monitoring uniformity of epitaxial semiconductor structures
G.G.Kozlov
TL;DR
This paper introduces a straightforward, cost-effective technique using photo-EMF relief measurement to visualize nonuniformities in planar MBE semiconductor structures, applicable broadly without expensive tools.
Contribution
It presents a novel, simple method for monitoring uniformity in epitaxial semiconductor structures using photo-EMF relief measurement.
Findings
Effective visualization of nonuniformities in MBE structures.
Method is inexpensive and widely applicable.
No specialized equipment needed.
Abstract
A simple method for visualization of nonuniformity of planar MBE structures is proposed. The method is based on measuring the relief of the photo-EMF. The method can be applied to a wide variety of semiconductor structures and does not require any expensive equipment.
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Taxonomy
TopicsOptical Coatings and Gratings · Surface Roughness and Optical Measurements · GaN-based semiconductor devices and materials