Kondo physics in tunable semiconductor nanowire quantum dots

TL;DR

This paper reports the observation of the Kondo effect in tunable indium arsenide nanowire quantum dots, demonstrating a transition from Coulomb blockade to conductance fluctuations with Kondo physics in between.

Contribution

It presents experimental evidence of Kondo physics in semiconductor nanowire quantum dots with tunable transparency, highlighting the transition between different transport regimes.

Findings

Kondo effect observed in indium arsenide nanowire quantum dots

Transport regime transitions from Coulomb blockade to conductance fluctuations

Kondo physics appears in an intermediate transparency regime

Abstract

We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.