Low-dimensional light-emitting transistor with tunable recombination zone

TL;DR

This paper introduces a tunable light-emitting transistor with a controllable recombination zone, enabling detailed analysis of low-dimensional devices through emitted light, combining experimental fabrication and numerical modeling.

Contribution

It presents a novel low-dimensional light-emitting transistor with adjustable recombination zone, fabricated via lithography on GaAs/AlGaAs heterostructures, integrating experimental and numerical studies.

Findings

Recombination zone size and position are tunable via voltages.

Device enables probing of low-dimensional electronic and optical properties.

Experimental and numerical results demonstrate controllable light emission.

Abstract

We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone.