Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device

TL;DR

This paper demonstrates gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device, allowing precise modulation of hyperfine interactions and NMR frequencies via side-gate voltages.

Contribution

It introduces a novel method to control NMR frequencies in a semiconductor device using gate voltages, enabling tunable hyperfine interactions.

Findings

NMR frequency can be systematically controlled by gate voltages.

Hyperfine interaction strength is modulated by electron position tuning.

Gate-tuned NMR provides a new tool for quantum spin control.

Abstract

We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.