Exchange effects on electron transport through single-electron spin-valve transistors

TL;DR

This paper investigates how exchange interactions influence electron transport in single-electron spin-valve transistors, considering non-local exchange effects, Coulomb blockade, and noncollinear magnetizations, with implications for device magnetic responses.

Contribution

It introduces a comprehensive analysis of two exchange mechanisms affecting electron transport in spin-valve transistors, accounting for non-local exchange and noncollinear magnetizations.

Findings

Both exchange mechanisms are of comparable strength.

Linear conductance varies with gate voltage and magnetic configuration.

System response to magnetic fields is characterized.

Abstract

We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox model for Coulomb blockade and we allow for noncollinear lead magnetization directions. Two distinct exchange mechanisms that have been discussed in the literature are shown to be of comparable strength and are taken into account on equal footing. We present results for the linear conductance as a function of gate voltage and magnetic configuration, and discuss the response of the system to applied magnetic fields.