Compositional tuning of ferromagnetism in Ga1-xMnxP
R. Farshchi, M. A. Scarpulla, P. R. Stone, K. M. Yu, I. D. Sharp, J.W., Beeman, H. H. Silvestri, L.A. Reichertz, E.E. Haller, and O.D. Dubon

TL;DR
This study explores how the ferromagnetic properties of Ga1-xMnxP can be tuned through compositional changes, revealing a correlation between Mn content, Curie temperature, and transport mechanisms, with implications for spintronic materials.
Contribution
It demonstrates the compositional tuning of ferromagnetism in Ga1-xMnxP and compares its properties to Ga1-xMnxAs, highlighting unique non-metallic behavior and transport mechanisms.
Findings
Curie temperature increases with Mn content
Ferromagnetism quenched by thermal annealing above 300°C
Transport occurs via hopping conduction at low temperatures
Abstract
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x.
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