Low-Temperature Optical Characterization of Single CdS Nanowires
L. V. Titova, Thang B. Hoang, H. E. Jackson, L.M. Smith, J.M., Yarrison-Rice, J.L. Lensch, L.J. Lauhon

TL;DR
This study employs low-temperature micro-PL imaging to analyze the optical properties of individual CdS nanowires, providing insights into their quality and electronic states, which is valuable for nanowire growth optimization.
Contribution
It demonstrates that low-temperature PL imaging is an effective method for assessing nanowire quality and spatially resolving electronic states at the single-wire level.
Findings
Low-temperature PL reveals nanowire quality differences.
Spatially resolved PL maps electronic states.
Method enables detailed nanowire characterization.
Abstract
We use spatially resolved micro-PL imaging at low temperature to study optical properties of two sets of CdS nanowires grown using 20 nm and 50 nm catalysts. We find that low temperature PL of single nanowires is an ideal technique to gauge the quality of a given growth run, and moreover enables the collection of detailed spatial information on single wire electronic states.
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Taxonomy
TopicsQuantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Nanowire Synthesis and Applications
