The Effect of Side Traps on Ballistic Transistor in Kondo Regime
Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita
TL;DR
This paper investigates how side-traps influence conductance in ballistic transistors within the Kondo regime, highlighting interference effects like the Fano-Kondo phenomenon relevant for future device engineering.
Contribution
It applies slave-boson mean field theory to analyze conductance modifications due to side-traps in a dual-electrode setup, exploring the interplay between quantum physics and device design.
Findings
Identification of a conductance dip due to Fano-Kondo interference
Analysis of transport properties in ballistic transistors with side-traps
Insights into quantum interference effects relevant for nanoscale device engineering
Abstract
The effect of side-traps on conductance is calculated in the range of slave-boson mean field theory, especially when there are electrodes on both sides of the conductor. This corresponds to an investigation of transport properties in future ballistic transistors. An intrinsic dip as a result of the interference effect (Fano-Kondo effect) is expected to be observed as one of interesting interplays between physics and engineering devices.
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