Contact effects in polymer field-effect transistors
D. Natelson, B. H. Hamadani, J. W. Ciszek, D. A. Corley, J. M. Tour

TL;DR
This paper investigates contact effects in polymer OFETs, revealing how contact resistance depends on mobility, barriers, doping, and surface treatments, with implications for device optimization and understanding charge injection.
Contribution
It introduces a generalized transmission line method for analyzing nonohmic contacts and explores how doping and surface modifications influence contact resistance in polymer transistors.
Findings
Contact resistivity inversely proportional to mobility in ohmic contacts
Doping alters metal-organic band alignment affecting injection
Self-assembled monolayers reduce contact resistance significantly
Abstract
Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device performance. We have performed a series of experiments using bottom-contact poly(3-hexylthiophene) (P3HT) OFETs in the shallow channel limit to examine the injection process. When contacts are ohmic we find that contact resistivity is inversely proportional to carrier mobility, consistent with diffusion-limited injection. However, data from devices with other electrode materials indicate that this simple picture is inadequate to describe contacts with significant barriers. A generalized transmission line method allows the analysis of nonohmic contacts, and we find reasonable agreement with a model for injection that accounts for the hopping nature of conduction…
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