Radiative quantum efficiency in an InAs/AlSb intersubband transition

TL;DR

This study measures the quantum efficiency of an InAs/AlSb intersubband emitter under high magnetic fields, revealing scattering mechanisms and material parameters through oscillation analysis and lifetime calculations.

Contribution

It provides a detailed analysis of scattering effects and material parameters in InAs/AlSb intersubband emitters using magnetic field-dependent quantum efficiency measurements.

Findings

Observation of oscillations due to elastic and inelastic scattering

Accurate modeling of excited state lifetime as a function of magnetic field

Extraction of electron effective mass and phonon energy from data

Abstract

The quantum efficiency of an electroluminescent intersubband emitter based on InAs/AlSb has been measured as a function of the magnetic field up to 20T. Two series of oscillations periodic in 1/B are observed, corresponding to the elastic and inelastic scattering of electrons of the upper state of the radiative transitions. Experimental results are accurately reproduced by a calculation of the excited state lifetime as a function of the applied magnetic field. The interpretation of these data gives an exact measure of the relative weight of the scattering mechanisms and allows the extraction of material parameters such as the energy dependent electron effective mass and the optical phonon energy.