Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography
Nicolas Garcia, Cheng Hao, Lu Yonghua, Manuel. Munoz, Yifang Chen,, Zhengqi Lu, Yun Zhou, Genhua Pan, Zheng Cui, A. A. Pasa

TL;DR
This study investigates spin-dependent transport and magnetoresistance in nanoconstrictions of Permalloy films fabricated via e-beam lithography, revealing non-scaling behavior and voltage drops at specific magnetic fields.
Contribution
It provides experimental data on magnetoresistance in nanoconstrictions with different geometries and compares results with theoretical resistance estimates.
Findings
Magnetoresistance does not scale with structure resistance.
Voltage drops of 20mV observed at 20Oe.
Different geometries exhibit distinct magnetoresistance behaviors.
Abstract
In this paper we show spin dependent transport experiments in nanoconstrictions ranging from 30 to 200nm. These nanoconstrictions were fabricated combining electron beam lithography and thin film deposition techniques. Two types of geometries have been fabricated and investigated. We compare the experimental results with the theoretical estimation of the electrical resistance. Finally we show that the magnetoresistance for the different geometries does not scale with the resistance of the structure and obtain drops in voltage of 20mV at 20Oe.
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