A possibility of increasing spin injection efficiency in magnetic junctions
E. M. Epshtein, Yu. V. Gulyaev, P. E. Zilberman, A. I. Krikunov

TL;DR
This paper explores how optimizing material parameters in magnetic junctions can significantly enhance spin injection efficiency, potentially enabling lower threshold currents and the development of spin-based THz lasers.
Contribution
It demonstrates that nonequilibrium spin polarization can match equilibrium levels with proper material choices, reducing switching current thresholds.
Findings
Nonequilibrium spin polarization can be comparable to equilibrium polarization.
Lower threshold current densities are achievable for junction switching.
Potential for creating THz lasers based on spin-polarized current injection.
Abstract
Nonequilibrium electron spin polarization is calculated under spin injection from one ferromagnet to another in magnetic junction. It is shown that the nonequilibrium spin polarization can be comparable with equilibrium one if the material parameters are chosen appropriately. This leads to lowering the threshold current density necessary for the junction switching and opens a perspective to creating THz laser based on the spin-polarized current injection.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Magnetic properties of thin films
