Hole-driven MIT theory, Mott transition in VO_2, MoBRiK

TL;DR

This paper introduces a hole-driven MIT theory applicable to inhomogeneous materials, reports a new MCM phase in VO_2 indicating a Mott transition, and presents MoBRiK devices exploiting this transition.

Contribution

It proposes a novel hole-driven MIT framework for inhomogeneous systems and reports the discovery of a Mott-like phase in VO_2 under electric field and temperature.

Findings

Observation of a linear MCM phase in VO_2 indicating Mott MIT

Structural transition between MCM and Rutile phases

Development of MoBRiK devices based on MIT

Abstract

For inhomogeneous high-T_c superconductors, hole-driven metal-insulator transition (MIT) theory explains that the gradual increase of conductivity with increasing hole doping is due to inhomogeneity with the local Mott system undergoing the first-order MIT and the local non-Mott system. For VO_2, a monoclinic and correlated metal (MCM) phase showing the linear characteristic as evidence of the Mott MIT is newly observed by applying electric field and temperature. The structural phase transition occurs between MCM and Rutile metal phases. Devices using the MIT are named MoBRiK.