Self-assembly of laterally aligned GaAs quantum dot pairs

TL;DR

This paper demonstrates the fabrication of strain-free, laterally aligned GaAs quantum dot pairs using droplet epitaxy, supported by photoluminescence observations and finite element energy level calculations.

Contribution

It introduces a novel method for creating laterally aligned GaAs quantum dot pairs with detailed experimental and theoretical analysis.

Findings

Observation of photoluminescence from single quantum dot pairs

Successful fabrication of strain-free, aligned quantum dot pairs

Finite element calculations support experimental results

Abstract

We report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Finite element energy level calculations of a model quantum dot pair are also presented.