Ballistic transport in induced one-dimensional hole systems

TL;DR

This paper reports the fabrication and analysis of a ballistic one-dimensional hole quantum wire in an undoped heterostructure, enabling high mobility and stable conductance quantization for studying spin-orbit and interaction effects.

Contribution

It introduces a novel undoped heterostructure approach for creating high-mobility ballistic hole quantum wires with stable quantized conductance.

Findings

Observation of clear quantized conductance plateaus

High mobility achieved at low hole densities

Potential for studying strong interaction effects in mesoscopic systems

Abstract

We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.