Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]
Michael E. Flatt\'e, Kimberley C. Hall
TL;DR
This paper is a formal response to a rejected comment on a previous publication about a spin-based FET, clarifying the authors' position and the status of the comment and response.
Contribution
The paper provides a formal reply to a comment on a prior publication, clarifying the rejection and publication status.
Findings
The comment was rejected by Applied Physics Letters.
The response clarifies the publication status.
No new experimental or theoretical results are presented.
Abstract
A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260. Here is our Response. As the proposed Comment has now been rejected by Applied Physics Letters, neither the Comment nor the Response will be published in Applied Physics Letters in this form.
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Taxonomy
TopicsQuantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices