Spin-Current Shot Noise in Mesoscopic Conductors

TL;DR

This paper develops a theoretical framework to analyze spin-current shot noise in mesoscopic conductors, providing insights into its origins and how it depends on device parameters, aiding future spintronic device design.

Contribution

It introduces a method combining scattering matrix theory and Green's functions to derive a general expression for spin-current shot noise at zero temperature.

Findings

Shot noise arises from transmissions to spin-resolved states and their interference.

Simulation of a spin transistor shows dependence of shot noise on device parameters.

Framework aids evaluation of spin-current noise in spintronic devices.

Abstract

In this paper, we present a method to investigate the spin-current shot noise in mesoscopic conductors, by using scattering matrix theory and Green's function technique. We first derive a general expression for the spin-current noise at zero-frequency limit, and extract the shot-noise component by discussing it at zero-temperature limit. The expression indicates that the spin-current shot noise in one lead is caused by the transmissions to the spin-resolved states in this lead and the interferences of these transmissions. As an application, we simulate the spin-current shot noise in a spin transistor, and discuss its dependence on the device parameters and the bias voltages applied to the transistor. The knowledge we gain from this study will help researchers to evaluate the spin-current shot noise in the future spintronic devices.