Spin-dependent tunneling in modulated structures of (Ga,Mn)As

TL;DR

This paper develops a theoretical model for spin-dependent tunneling in (Ga,Mn)As heterostructures, comparing predictions with experiments to optimize device performance based on various physical parameters.

Contribution

It introduces a combined tight-binding and Landauer-Büttiker model for all-semiconductor ferromagnetic heterostructures containing (Ga,Mn)As layers, linking theory with experimental data.

Findings

The model accurately predicts spin-dependent Zener tunneling, TMR, and TAMR.

Device performance depends on carrier density, magnetization, strain, bias, and spacer thickness.

Theoretical insights guide optimization of spintronic devices.

Abstract

A model of coherent tunneling, which combines multi-orbital tight-binding approximation with Landauer-B\"uttiker formalism, is developed and applied to all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A comparison of theoretical predictions and experimental results on spin-dependent Zener tunneling, tunneling magnetoresistance (TMR), and anisotropic magnetoresistance (TAMR) is presented. The dependence of spin current on carrier density, magnetization orientation, strain, voltage bias, and spacer thickness is examined theoretically in order to optimize device design and performance.