Effect of Hole Doping on the Electronic Structure of Tl2201

TL;DR

This paper investigates how hole doping influences the electronic structure and Fermi surface of Tl2201, revealing that TlO bands are highly sensitive to doping, which challenges the rigid band approximation in cuprate analysis.

Contribution

It provides new insights into doping effects on Tl2201's electronic structure, emphasizing the importance of non-rigid band behavior in cuprates.

Findings

TlO bands shift rapidly to higher energies with hole doping

Doping effects deviate from the rigid band model

Electronic spectra analysis must consider doping-induced band movements

Abstract

We discuss doping dependencies of the electronic structure and Fermi surface of the monolayer Tl$_{2-x}$Cu$_x$Ba$_2$CuO$_{6+\delta}$ (Tl2201). The TlO bands are found to be particularly sensitive to doping in that these bands rapidly move to higher energies as holes are added into the system. Such doping effects beyond the rigid band picture should be taken into account in analyzing and modeling the electronic spectra of the cuprates.