Synthesis of VO_2 Nanowire and Observation of the Metal-Insulator Transition

TL;DR

This paper reports a new method for synthesizing VO_2 nanowires and observes their metal-insulator transition, revealing potential for advanced electronic applications.

Contribution

A novel synthetic approach for crystalline VO_2 nanowires and the first observation of their non-one-dimensional metal-insulator transition behavior.

Findings

Nanowires synthesized at 650°C show semiconducting behavior.

Nanowires at 670°C exhibit metal-insulator transition.

Semiconducting nanowire's temperature coefficient of resistance is 7.06%/K.

Abstract

We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the one-dimensional property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06 %/K at 300 K, which is higher than that of commercial bolometer.