Surface states, Friedel oscillations, and spin accumulation in p-doped semiconductors
Tudor D. Stanescu, Victor Galitski

TL;DR
This paper investigates how localized surface states in p-doped semiconductors contribute to spin accumulation and Friedel oscillations near boundaries under charge current, revealing detailed quantum and many-body effects.
Contribution
It provides an exact quantum mechanical solution for boundary states in the Luttinger model and links localized states to surface spin accumulation and oscillations.
Findings
Localized surface states contribute to spin accumulation.
Friedel oscillations with three distinct periods are observed.
Total spin accumulation follows a specific mass ratio formula.
Abstract
We consider a hole-doped semiconductor with a sharp boundary and study the boundary spin accumulation in response to a charge current. First, we solve exactly a single-particle quantum mechanics problem described by the isotropic Luttinger model in half-space and construct an orthonormal basis for the corresponding Hamiltonian. It is shown that the complete basis includes two types of eigenstates. The first class of states contains conventional incident and reflected waves, while the other class includes localized surface states. Second, we consider a many-body system in the presence of a charge current flowing parallel to the boundary. It is shown that the localized states contribute to spin accumulation near the surface. We also show that the spin density exhibits current-induced Friedel oscillations with three different periods determined by the Fermi momenta of the light and heavy…
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