Shot noise of a multiwalled carbon nanotube field effect transistor

TL;DR

This study measures shot noise in a semiconducting multiwalled carbon nanotube FET at cryogenic temperatures, revealing low noise levels and high transconductance, which are promising for nanoelectronic applications.

Contribution

First measurement of shot noise in a multiwalled carbon nanotube FET at microwave frequencies, demonstrating low charge noise and high transconductance at 4.2 K.

Findings

Transconductance of 3-3.5 μS at optimal bias.

Gate voltage noise of 0.2-0.3 μV/√Hz.

Effective charge noise of 2-3×10⁻⁵ e/√Hz.

Abstract

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $\mu{V}/ \sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3 \cdot 10^{-5}$ e/$\sqrt{Hz}$.