Temperature dependent electronic correlation effects in GdN

TL;DR

This paper studies how electronic correlations in GdN change with temperature using advanced many-body and first-principles calculations, revealing a temperature-dependent redshift in the conduction band edge.

Contribution

It combines multi-band Kondo lattice modeling with TB-LMTO calculations to analyze temperature effects on GdN's electronic structure, providing new insights into correlation effects.

Findings

Redshift of 0.34 eV in the lower band edge at T_c to 0

Results align with experimental and previous theoretical data

Provides detailed temperature-dependent electronic properties

Abstract

We investigate temperature dependent electronic correlation effects in the conduction bands of Gadolinium Nitride (GdN) based on the combination of many body analysis of the multi-band Kondo lattice model and the first principles TB-LMTO bandstructure calculations. The physical properties like the quasi-particle density of states (Q-DOS), spectral density (SD) and quasi-particle bandstructure (Q-BS) are calculated and discussed. The results can be compared with spin and angle resolved inverse photoemission spectroscopy (ARIPS) of the conduction bands of GdN. A redshift of 0.34 eV of the lower band edge (T=$T_{c}$ $\to$ T=0) is obtained and found in close comparison with earlier theoretical prediction and experimental value reported in the literature.